TL;DR: Samsung is set to launch next-gen HBM4 memory with its advanced 1c DRAM core die, targeting mass production in late 2025. Under Vice Chairman Jeon Young-hyun's leadership, Samsung aims to ...
SEOUL, South Korea--(BUSINESS WIRE)--Samsung Electronics Co., Ltd., the world leader in advanced memory technology, today announced it has developed the industry’s first 24-gigabit (Gb) GDDR7 1 DRAM.
TL;DR: NVIDIA's new SoCAMM memory module, developed with Samsung, SK hynix, and Micron, features 16-stacked LPDDR5X chips using copper wire bonding for improved thermal efficiency. Micron leads mass ...
Micron ships 1γ DDR5 memory samples, boosting next-gen AI PCs, smartphones, and cloud computing performance. Micron’s new DRAM node increases speed by 15% and cuts power use by 20%, advancing AI and ...
TOKYO, Feb. 12, 2025 (GLOBE NEWSWIRE) -- Leading semiconductor test equipment supplier Advantest Corporation (TSE: 6857) today announced the T5801 Ultra-High-Speed DRAM Test System. The cutting-edge ...
China's memory manufacturer CXMT, backed by government support, shifted to high-end technology development from 2025 and has introduced multiple next-generation DRAM products within a year, with ...
In late February, Micron announced it had shipped samples of its sixth-generation DRAM (1γ DRAM), becoming the first in the industry to do so. However, its design and manufacturing approach differ ...
Hitachi, Ltd. (NYSE: HIT / TSE: 6501) in cooperation with Elpida Memory, Inc. (TSE: 6665), have proposed a new DRAM(*1) circuit design enabling 0.4-V operation. The proposed array employs a twin cell ...
On Tuesday, Micron Technology, Inc (NASDAQ:MU) announced it shipped samples of its 1γ (1-gamma), sixth-generation (10nm-class) DRAM node-based DDR5 memory designed for next-generation CPUs to ...
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