Last week, South Korean prosecutors indicted multiple individuals in a case alleging that a former Samsung engineer leaked advanced DRAM manufacturing process data to China’s ChangXin Memory ...
Samsung Electronics has successfully developed its sixth-generation DRAM, known as 1c DRAM, built using a 10nm class process. The product has received internal Production Readiness Approval (PRA), ...
Micron Technology, Inc., has announced production sampling of its new 1Gb DDR2 device fabricated on 68-nanometer (nm) DRAM process technology. The new process, coupled with Micron’s 6F² technology, ...
AI workloads are pushing the boundaries of compute, memory, and interconnect architectures, and to meet these goals, manufacturers are rapidly accelerating advanced logic and DRAM development. Chief ...
Flash memory has made incredible capacity strides thanks to monolithic 3D processing enabled by the stacking of more than 200 layers, which is on its way to 1.000 layers in future generations.[1] But ...
What just happened? The Seoul Central District Prosecutors' Office has indicted 10 former Samsung Electronics employees for violating South Korea's Industrial Technology Protection Act, which ...
Apple has secured enough NAND flash memory to sustain production through the first quarter of 2026. But the iPhone maker is ...
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