This 0.13um triple gate oxide CMOS process features one additional layer of gate oxide introducing 1.8V CMOS into a standard 1.2/3.3V CMOS array on 0.13um technology. This process is fully compatible ...
Achieving improvements in performance in advanced SoCs and packages — those used in mobile applications, data centers, and AI — will require complex and potentially costly changes in architectures, ...
A new technical paper titled “Novel STI Technology for Enhancing Reliability of High-k/Metal Gate DRAM” was published by researchers at Sungkyunkwan University and Samsung Electronics. “The challenges ...
The performance potential of SiC is indisputable. The key challenge to be mastered is to determine which design approach achieves the biggest success in applications. Advanced design activities are ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results
Feedback