Santa Clara, CA and Kyoto, Japan, April 28, 2025 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced that SMA Solar Technology AG, a leading global specialist in photovoltaic and storage system ...

The lineup consists of six models with on-resistance ranging from 13mΩ to 65mΩ. · GlobeNewswire Inc. Santa Clara, CA and Kyoto, Japan, Dec. 04, 2025 (GLOBE NEWSWIRE) -- ROHM Semiconductor today ...

KYOTO, Japan, April 24, 2025 /PRNewswire/ -- ROHM Co., Ltd. has developed new 4-in-1 and 6-in-1 SiC molded modules in the HSDIP20 package for power-factor-correction (PFC) circuits and LLC-resonant ...

The BSM120D12P2C005 is a half bridge power module consisting of SiC-DMOSFETs and SiC-SBDs from ROHM. With a drain-source voltage of 1200 V and drain current of 120 A, the device has a maximum total ...

Santa Clara, CA and Kyoto, Japan, Sept. 16, 2025 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced the development of the DOT-247, a new 2-in-1 SiC molded module (SCZ40xxDTx, SCZ40xxKTx) designed ...

Rohm Semiconductor has announced the use of power modules equipped with the company's fourth-generation SiC MOSFET bare chips for traction inverters in three ZEEKR EV models manufactured by Zhejiang ...

Rohm has introduced the DOT-247, a 2-in-1 SiC molded module that combines two TO-247 devices to deliver higher power density. The dual structure accommodates larger chips, while the optimized internal ...

SemiQ has put 1,200V silicon carbide mosfet and Schottky diode half-bridges into standard ’62mm’ industrial power modules. There are four parts, each measuring 62 x 106.5 x 17mm (plus terminals): two ...

Santa Clara, CA and Kyoto, Japan, April 24, 2025 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced the development of new 4-in-1 and 6-in-1 SiC molded modules in the HSDIP20 package optimized for ...

Compared to conventional packages (TO-263-7L) with equivalent voltage ratings and on-resistance, these new packages offer approximately 39% improved thermal performance. This enables high-power ...