Abstract: With the fast development trend of highly integrated electronic products, as the key technology of 3-D interconnect circuits, the research on monolithic intertier via (MIV) testing ...
Abstract: In this work, time-dependent gate reliability studies were carried out on GaN high-electron-mobilitytransistors (HEMTs) under continuous DC gate bias ($\mathrm{V}_{\mathrm{GS}}$) and ...
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