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Atom-thin ferroelectric transistor can store 3,024 polarization states
Over the past few decades, electronics engineers have been trying to develop new neuromorphic hardware, systems that mirror the organization of neurons in the human brain. These systems could run ...
EPC’s first seventh-generation eGaN® device enters mass production, delivering up to 3× better performance than silicon ...
The U.S. power transistor market was valued at USD 3.10 billion in 2025 and is projected to reach USD 6.43 billion by 2035, expanding at a CAGR of 9.55%. Growth is fueled by rising EV adoption driving ...
Breakthrough Analog Semiconductor Solution Selected from 1200 Global Startups for Tackling the AI Compute Bottleneck ...
New chipmaking systems boost the energy-efficient performance of Gate-All-Around transistors and wiring at 2nm and beyondViva™ pure radical ...
If executed at the scale, Musk's orbital data center plan could have devastating effects on the environment and the ...
New chipmaking systems boost the energy-efficient performance of Gate-All-Around transistors and wiring at 2nm and beyondViva pure radical treatment smoothens GAA silicon nanosheets with atomic-level ...
A joint research team led by Professors Donghee Son and Jin-Hong Park at SKKU has developed a stretchable, self-healing, and reconfigurable electronic circuit platform that can autonomously recover ...
Tech Xplore on MSN
Redefining GaN power devices for adoption in EVs and data centers
Researchers at the Indian Institute of Science (IISc) have uncovered fundamental insights into designing gallium nitride (GaN ...
The variety of compositions available gives designers many options to achieve the specific properties they need. Indium tin oxide (ITO), In 2 O 3, indium gallium oxide (IGO), indium gallium zinc oxide ...
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